Part Number | 1N5619US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microsemi |
Description | DIODE GEN PURP 600V 1A D5A |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 250ns |
Current - Reverse Leakage @ Vr | 500nA @ 600V |
Capacitance @ Vr, F | 25pF @ 12V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
1N5619US
Microsemi Commercial Components Group
7857
1.43
Dedicate Electronics (HK) Limited
1N5619US
MICROS
3311
2.4225
Detail Technology (HK) Limited
1N5619US
MICROSEM
4509
3.415
HK Fortune Electronica Limited
1N5619US
Microse
492
4.4075
Ande Electronics Co., Limited
1N5619
MICRONS
8237
5.4
Yingxinyuan INT'L (Group) Limited