Part Number | 1N5807US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microsemi |
Description | DIODE GEN PURP 50V 3A B-MELF |
Series | - |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
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1N5807US
Microsemi Commercial Components Group
9000
0.06
YO CHIP(HONG KONG)TRADING CO LIMITED
1N5807US
MICROS
313
1.26
KYO Inc.
1N5807US
MICROSEM
1000
2.46
DXWAY TECHNOLOGY CO., LIMITED
1N5807US
Microse
226
3.66
BeiJing Daruitong Components Co.,Ltd
1N5807US
MICRONS
18000
4.86
HK Niuhuasi Technology Limited