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Description
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic. Symbol. 1N5817. 1N5818. 1N5819 . Unit. Jul 4, 2011 1N5817, 1N5818, 1N5819 . Low drop power Schottky rectifier. Features. Very small conduction losses. Negligible switching losses. Revision: 20-Oct-09. DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com. 1. Schottky Barrier Rectifier. 1N5817 thru 1N5819 . 1N5817, 1N5818, 1N5819 . 1N5817 and 1N5819 are Preferred Devices. Axial Lead Rectifiers. This series employs the Schottky Barrier principle in a large area. The VS- 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in
| Part Number | 1N5819 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Diodes - Rectifiers - Single |
| Brand | Microsemi |
| Description | DIODE SCHOTTKY 40V 1A DO41 |
| Series | - |
| Packaging | Tape & Box (TB) |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 550mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 40V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | 150°C (Max) |
| Image |  |
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