Description
The CENTRAL SEMICONDUCTOR 2N1613 is a silicon. NPN epitaxial planar transistor designed for small signal general purpose switching applications. TECHNICAL DATA. NPN LOW POWER SILICON TRANSISTOR. Qualified per MIL-PRF-19500/181. Devices. Qualified Level. 2N718A. 2N1613 . 2N1613L. JAN. 2N1499A. N/A. 2N1613 TO-5. 2N1613 . 2N2043. N/A. 2N2160. N/A. 2N2171. N/A. 2N2218A TO-5. 2N2218A. 2N2219 TO-5. 2N2219A. 2N2219A TO-5. 2N2219A. Dec 14, 2015 2N1613 TO-5. 2N1613 . 2N2043. N/A. 2N2160. N/A. 2N2171. N/A. 2N2218A TO-5 . 2N2218A. 2N2219 TO-5. 2N2219A. 2N2219A TO-5. 2N1499A. N/A. 2N1613 TO-5. 2N1613 . 2N2043. N/A. 2N2160. N/A. 2N2171. N/A. 2N2218A TO-5. 2N2218A. 2N2219 TO-5. 2N2219A. 2N2219A TO-5. 2N2219A.
Part Number | 2N1613 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Microsemi |
Description | TRANS NPN 50V 0.5A TO-39 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Power - Max | 3W |
Frequency - Transition | 60MHz |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 |
Image |
2N1613
Microsemi Commercial Components Group
1391
1.38
HK HEQING ELECTRONICS LIMITED
2N1613
MICROS
2500
1.9775
Yingxinyuan INT'L (Group) Limited
2N1613
MICROSEM
60
2.575
FLOWER GROUP(HK)CO.,LTD
2N1613
Microse
3765
3.1725
Belt (HK) Electronics Co
2N1613
MICRONS
650
3.77
WIN AND WIN ELECTRONICS LIMITED