(4/5) based on 13 customer reviews
Description
2N3821 / 2N3822 . FEATURES ABSOLlalTE HMIMUM RATINGS . Law Capacitance (Ta. - 25 C unless otherwise noted} e Up to 65001.1! Tranaconductance Mar 10, 1997 The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. Mar 10, 1997 Figure 1 represents the basic circuit identifying the equiv- alent noise sources en and in found in a JFET (or bipolar transistor). The en-noise 2N3822 . 5.0K. Adjust 2. Voltage. Adjust. +. 10 F. D3. D4. D1. 1N4001. Q2. 2N5640. 10V. Output Range: 0 VO 25 V. 0 IO 1.5 A. Diodes D1 and D2 2N3822 . 5.0 k. Adjust 2. Voltage. Adjust. +. 10 F. D3. D4. D1. 1N4001. Q2. 2N5640. -10 V. Output Range: 0 VO 25 V. Output Range: 0 IO 1.5 A.
| Part Number | 2N3822 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Microsemi |
| Description | N CHANNEL JFET |
| Series | Military, MIL-PRF-19500/375 |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 50V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 6V @ 500pA |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 15V |
| Resistance - RDS(On) | - |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Image |  |
2N3822
Microsemi Commercial Components Group
5427
0.82
Dedicate Electronics (HK) Limited
2N3822
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200
1.6825
Goodbest International Holding Limited
2N3822
MICROSEM
16000
2.545
Finestock Electronics HK Limited
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Microse
200
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Good Time Electronic Group Limited
2N3822
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2507
4.27
CIS Ltd (CHECK IC SOLUTION LIMITED)
