Description
2N3823 . FEATURES BSOI-UTE MAXIMUM RATINGS . Low Ohm (Tn. - 25 C unless otherwise noted). 0 Low Cepacltarioe Gale-Source or Gate-Drain Voltage . 2N3823 is used because of its low capacitance and high. Yfs Bandwidth of this amplifier is limited by RL and load capacitance. JFET Pierce Crystal Oscillator. combining with the device to cause an amplifier to be unstable. For example, consider the 2N3823 at 200 MHz. The common gate admittance parameters are:. Forward Transfer Admittance. (VDS = 15 Vdc, VGS = 0, f = 200 MHz). Yfs . . 5.6. mmhos. Reverse Transfer Admittance. (VDS = 15 Vdc, VGS = 0, f = 200 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for
Part Number | 2N3823 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - JFETs |
Brand | Microsemi |
Description | N CHANNEL JFET |
Series | Military, MIL-PRF-19500/375 |
Packaging | Bulk |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | 30V |
Drain to Source Voltage (Vdss) | 30V |
Current - Drain (Idss) @ Vds (Vgs=0) | 20mA @ 15V |
Current Drain (Id) - Max | - |
Voltage - Cutoff (VGS off) @ Id | 8V @ 500pA |
Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 15V |
Resistance - RDS(On) | - |
Power - Max | 300mW |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package | TO-72 |
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2N3823
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