(5/5) based on 18 customer reviews
Description
Jun 4, 2001 2N4856 . 4 to 10. 40. 25. 250. 9. 2N4857. 2 to 6. 40. 40. 250. 10. 2N4858. 0.8 to 4. 40. 60. 250. 20. 2N4859. 4 to 10. 30. 25. 250. The CENTRAL SEMICONDUCTOR 2N4856 and. 2N4856A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: CP206- 2N4856 . N-Channel JFET Die. Die Size. 21 x 18 MILS. Die Thickness. 8.0 MILS. Drain Bonding Pad Size. 3.0 x 3.0 MILS. Source Bonding Pad Size. TO-18 2N4856 . 25. 4.0. 10. 50. - -. 40. 18. 8.0. 9.0. 25. SDG. TO-18 2N4856A. 25. 4.0. 10. 50. - -. 40. 10. 4.0. 8.0. 20. SDG. TO-18 2N4857. 40. 2.0. 6.0. 20. 100. Junction and Storage Temperature. TJ, Tstg. 55 to +150. C. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
| Part Number | 2N4856 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Microsemi |
| Description | N CHANNEL JFET |
| Series | Military, MIL-PRF-19500/385 |
| Packaging | Bulk |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 175mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 10V @ 500pA |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V |
| Resistance - RDS(On) | 25 Ohm |
| Power - Max | 360mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Image |  |
2N4856
Microsemi Commercial Components Group
3080
1.15
ZHW High-tech (HK) Co., Limited
2N4856
MICROS
8000
2.485
MY Group (Asia) Limited
2N4856
MICROSEM
21000
3.82
WALTON ELECTRONICS CO., LIMITED
2N4856
Microse
1236
5.155
Cicotex Electronics (HK) Limited
2N4856
MICRONS
2412
6.49
Ellison Electronics Ltd.
