Description
The CENTRAL SEMICONDUCTOR 2N4912 is a silicon. NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed FEATURES: 2N4912 . * Low Collector-Emitter Saturation Voltage. Vcsso-06V ( Max.) g c = 1.0 A. * Excellent Safe Operating Area. * Gain Specified to c= 1.0 Amp . 0.75. 0.05. 20. 2N4910. 2N4898. 1.0. 25. 40. 40. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4911. 2N4899. 1.0. 25. 60. 60. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4912 . 2N4900. 1.0 . 25. 0.75. 0.05. 20. 2N4910. 2N4898. 1.0. 25. 40. 40. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4911. 2N4899. 1.0. 25. 60. 60. 20. 150. 0.5. 0.6. 1.0. 3.0. 2N4912 . 2N4900. 1.0 . 25.
Part Number | 2N4912 |
Brand | Microsemi |
Image |
2N4912
Microsemi Commercial Components Group
46
1.3
Val Technologies, Inc
2N4912
MICROS
20
2.3375
KYO Inc.
2N4912
MICROSEM
5988
3.375
Viassion Technology Co., Limited
2N4912
Microse
200
4.4125
Xinnlinx Electronics Pte Ltd
2N4912
MICRONS
80
5.45
FLOWER GROUP(HK)CO.,LTD