(4/5) based on 19 customer reviews
Description
The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier,. Aug 3, 2015 2N5179 . 2N5770. BFY90. PN3563. PN3564. GROSS DIE PER 4 INCH WAFER. 53,788. PROCESS CP317. Small Signal Transistor. NPN - RF 2N5179 . 2N5770. BFY90. PN3563. PN3564. GROSS DIE PER 4 INCH WAFER. 53,788. PROCESS CP317. Small Signal Transistor. NPN - RF Transistor Chip. Page 1. May 2006. Rev 3. 1/13. 13. TDE1737. Interface circuit - relay and lamp- driver. Features. High output current. Adjustable short-circuit protection. stead of 2N5179s and used a saturated amplifier in place of a conventional ALC scheme. All three oscillators showed a tempco with respect to the active
| Part Number | 2N5179 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - RF |
| Brand | Microsemi |
| Description | TRANS NPN 12V 0.05A TO-72 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 2GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 200MHz |
| Gain | 15dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Image |  |
2N5179
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