Description
2N6800, HARRIS, Semiconductors, Integrated Circuits (ICs)
Part Number | 2N6800 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET N-CH 400V TO-205AF TO-39 |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AF Metal Can |
Image |
2N6800
Microsemi Commercial Components Group
16000
0.02
Finestock Electronics HK Limited
2N6800
MICROS
1000
0.595
MY Group (Asia) Limited
2N6800
MICROSEM
520
1.17
Tengyi Electronics (HK) Limited
2N6800
Microse
78
1.745
Cicotex Electronics (HK) Limited
2N6800
MICRONS
14220
2.32
Viassion Technology Co., Limited