Part Number | 2N6849U |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET P-CH 100V 18-LCC |
Series | - |
Packaging | Bulk |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 4.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 18-ULCC (9.14x7.49) |
Package / Case | 18-BQFN Exposed Pad |
Image |
2N6849U
Microsemi Commercial Components Group
1
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Microse
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