Description
MOSFET 4N-CH 100V 1A MO-036AB Series: - FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25~C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250米A Gate Charge (Qg) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300, 7.62mm) Supplier Device Package: MO-036AB
Part Number | 2N7334 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Microsemi |
Description | MOSFET 4N-CH 100V 1A MO-036AB |
Series | - |
Packaging | Bulk |
FET Type | 4 N-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 14-DIP (0.300", 7.62mm) |
Supplier Device Package | MO-036AB |
Image |
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