Part Number | APT19M120J |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET N-CH 1200V 19A SOT-227 |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 19A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9670pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 545W (Tc) |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | ISOTOP |
Package / Case | SOT-227-4, miniBLOC |
Image |
APT19M120J
Microsemi Commercial Components Group
18000
0.67
MY Group (Asia) Limited
APT19M120J
MICROS
6073
1.52
Dedicate Electronics (HK) Limited
APT19M120J
MICROSEM
16000
2.37
Finestock Electronics HK Limited
APT19M120J
Microse
7660
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Detail Technology (HK) Limited
APT19M120J
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4.07
MY Group (Asia) Limited