Part Number | APT33GF120LRDQ2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microsemi |
Description | IGBT 1200V 64A 357W TO264 |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 64A |
Current - Collector Pulsed (Icm) | 75A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
Power - Max | 357W |
Switching Energy | 1.315mJ (on), 1.515mJ (off) |
Input Type | Standard |
Gate Charge | 170nC |
Td (on/off) @ 25°C | 14ns/185ns |
Test Condition | 800V, 25A, 4.3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Supplier Device Package | TO-264 [L] |
Image |
APT33GF120LRDQ2G
Microsemi Commercial Components Group
8000
1.74
MY Group (Asia) Limited
APT33GF120LRDQ2G
MICROS
20
2.53
Yu Hong Technologies Limited
APT33GF120LRDQ2G
MICROSEM
1000
3.32
INNOVO ELEC TECH (HK) CO., LIMITED
APT33GF120B2RDQ2G
Microse
18000
4.11
MY Group (Asia) Limited
APT33GF120BRG
MICRONS
50000
4.9
Yingxinyuan INT'L (Group) Limited