Part Number | APT45GP120B2DQ2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microsemi |
Description | IGBT 1200V 113A 625W TMAX |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 113A |
Current - Collector Pulsed (Icm) | 170A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
Power - Max | 625W |
Switching Energy | 900µJ (on), 905µJ (off) |
Input Type | Standard |
Gate Charge | 185nC |
Td (on/off) @ 25°C | 18ns/100ns |
Test Condition | 600V, 45A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Image |
APT45GP120B2DQ2G
Microsemi Commercial Components Group
36764
0.84
Ysx Tech Co., Limited
APT45GP120B2DQ2G
MICROS
6000
2.57
Bonase Electronics (HK) Co., Limited
APT45GP120B2DQ2G
MICROSEM
20000
4.3
Yingxinyuan INT'L (Group) Limited
APT45GP120B2DQ2G
Microse
18000
6.03
HK Niuhuasi Technology Limited
APT45GP120B2DQ2G
MICRONS
11001
7.76
CIS Ltd (CHECK IC SOLUTION LIMITED)