Part Number | APT45GR65SSCD10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microsemi |
Description | INSULATED GATE BIPOLAR TRANSISTO |
Series | - |
Packaging | Bulk |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 118A |
Current - Collector Pulsed (Icm) | 224A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
Power - Max | 543W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 203nC |
Td (on/off) @ 25°C | 15ns/100ns |
Test Condition | 433V, 45A, 4.3 Ohm, 15V |
Reverse Recovery Time (trr) | 80ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D3Pak |
Image |
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