Part Number | APT65GP60B2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Microsemi |
Description | IGBT 600V 100A 833W TMAX |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 250A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
Power - Max | 833W |
Switching Energy | 605µJ (on), 896µJ (off) |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 30ns/91ns |
Test Condition | 400V, 65A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Image |
APT65GP60B2G
Microsemi Commercial Components Group
119
0.81
Southern Electronics Tech Limited
APT65GP60B2G
MICROS
5000
1.93
HITO TECHNOLOGY LIMITED
APT65GP60B2G
MICROSEM
18000
3.05
HK Niuhuasi Technology Limited
APT65GP60B2G
Microse
82
4.17
Yingxinyuan INT'L (Group) Limited
APT65GP60B2G
MICRONS
11001
5.29
Ande Electronics Co., Limited