Part Number | APT9F100B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET N-CH 1000V 9A TO-247 |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2606pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 337W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 [B] |
Package / Case | TO-247-3 |
Image |
APT9F100B
Microsemi Commercial Components Group
10
0.88
E-Power Market Co.,Ltd
APT9F100B
MICROS
330
2.30333333333333
CHIPMALL ELECTRONICS LIMITED
APT9F100B
MICROSEM
2070
3.72666666666667
Blue star electronics Co.,Limited
APT9F100S
Microse
1000
5.15
MY Group (Asia) Limited