Part Number | APTGT35DA120D1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Microsemi |
Description | IGBT 1200V 55A 205W D1 |
Series | - |
IGBT Type | Trench Field Stop |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 55A |
Power - Max | 205W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 2.5nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | D1 |
Supplier Device Package | D1 |
Image |
APTGT35DA120D1G
Microsemi Commercial Components Group
4108
1.02
Wanzhong Mechanical & Electrical Equipment Limited
APTGT35DA120D1G
MICROS
6515
2.1575
Bonase Electronics (HK) Co., Limited
APTGT35DA120D1G
MICROSEM
9128
3.295
BeiJing Jietuozijing Science and Technology Co., Ltd.
APTGT35DA120D1G
Microse
3344
4.4325
XINYUN ELECTRONICS COMPANY LIMITED
APTGT35DA120D1G
MICRONS
8964
5.57
MY Group (Asia) Limited