Part Number | APTGT50DH60T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Microsemi |
Description | MOD IGBT 600V 80A SP1 |
Series | - |
IGBT Type | Trench Field Stop |
Configuration | Asymmetrical Bridge |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 80A |
Power - Max | 176W |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
Current - Collector Cutoff (Max) | 250µA |
Input Capacitance (Cies) @ Vce | 3.15nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |
Image |
APTGT50A120D1G
Microsemi Commercial Components Group
50
0.57
Wanzhong Mechanical & Electrical Equipment Limited
APTGT50A120D1G
MICROS
632
1.54
BeiJing Jietuozijing Science and Technology Co., Ltd.
APTGT50DDA120T3G
MICROSEM
1575
2.51
JFJ Electronics Co.,Limited
APTGT50A120D1G
Microse
1000
3.48
Bonase Electronics (HK) Co., Limited
APTGT50A120D1
MICRONS
2088
4.45
USA R&K Holdings Group Co. Limited.