Part Number | APTGT75DA120D1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Microsemi |
Description | IGBT 1200V 110A 357W D1 |
Series | - |
IGBT Type | Trench Field Stop |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 110A |
Power - Max | 357W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
Current - Collector Cutoff (Max) | 4mA |
Input Capacitance (Cies) @ Vce | 5345nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | D1 |
Supplier Device Package | D1 |
Image |
APTGT75DA120D1G
Microsemi Commercial Components Group
3640
1.89
Wanzhong Mechanical & Electrical Equipment Limited
APTGT75DA120D1G
MICROS
1576
2.585
Bonase Electronics (HK) Co., Limited
APTGT75DA120D1G
MICROSEM
3370
3.28
BeiJing Jietuozijing Science and Technology Co., Ltd.
APTGT75DA120D1G
Microse
3137
3.975
XINYUN ELECTRONICS COMPANY LIMITED
APTGT75DA120D1G
MICRONS
2625
4.67
MY Group (Asia) Limited