Part Number | APTM100A13SG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Microsemi |
Description | MOSFET 2N-CH 1000V 65A SP6 |
Series | - |
Packaging | Bulk |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 65A |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs | 562nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15200pF @ 25V |
Power - Max | 1250W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Supplier Device Package | SP6 |
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APTM100A13SG
Microsemi Commercial Components Group
11010
0.52
N&S Electronic Co., Limited
APTM100A13SG
MICROS
18000
0.9825
MY Group (Asia) Limited
APTM100A13SG
MICROSEM
5112
1.445
Hongkong Yunling Electronics Co.,Limited
APTM100A13SG
Microse
37500
1.9075
Cinty Int'l (HK) Industry Co., Limited
APTM100A13SG
MICRONS
9000
2.37
STXW(HK)Technology Limited