(4/5) based on 20 customer reviews
Description
MOSFET 4N-CH 1000V 19A SP3 Series: POWER MOS 8? FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25～C: 19A Rds On (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) @ Vds: 6800pF @ 25V Power - Max: 357W Operating Temperature: -40～C ~ 150～C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3
| Part Number | APTM100H46FT3G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Microsemi |
| Description | MOSFET 4N-CH 1000V 19A SP3 |
| Series | POWER MOS 8 |
| Packaging | 4 N-Channel (H-Bridge) |
| FET Type | Bulk |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 19A |
| Rds On (Max) @ Id, Vgs | 552 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
| Image |  |
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