Part Number | APTM100UM45DAG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET N-CH 1000V 215A SP6 |
Series | POWER MOS 7 |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 215A |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 30mA |
Gate Charge (Qg) (Max) @ Vgs | 1602nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 42700pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 5000W (Tc) |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 107.5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SP6 |
Package / Case | SP6 |
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APTM100UM45DAG
Microsemi Commercial Components Group
8
0.5
Huickle Electronics Co,.Ltd.
APTM100UM45DAG
MICROS
18000
1.5875
MY Group (Asia) Limited
APTM100UM45DAG
MICROSEM
11001
2.675
Ande Electronics Co., Limited
APTM100UM45DAG
Microse
5965
3.7625
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
APTM100UM45DAG
MICRONS
6976
4.85
Viassion Technology Co., Limited