Description
MOSFET 4N-CH 1200V 8A SP1 Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) @ Vds: 3812pF @ 25V Power - Max: 208W Operating Temperature: -40~C ~ 150~C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1
Part Number | APTM120H140FT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Microsemi |
Description | MOSFET 4N-CH 1200V 8A SP1 |
Series | - |
Packaging | Bulk |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 1.68 Ohm @ 7A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3812pF @ 25V |
Power - Max | 208W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |
Image |
APTM120H140FT1G
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