Part Number | JAN2N6796 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Microsemi |
Description | MOSFET N-CH TO-205AF TO-39 |
Series | Military, MIL-PRF-19500/557 |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28.51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 195 mOhm @ 8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AF Metal Can |
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JAN2N6796
Microsemi Commercial Components Group
1000
0.13
HK Niuhuasi Technology Limited
JAN2N6796
MICROS
1500
1.1525
Good Time Electronic Group Limited
JAN2N6796
MICROSEM
1000
2.175
MY Group (Asia) Limited
JAN2N6796
Microse
1600
3.1975
HK Yongchuang Electronic Technology Limited
JAN2N6901
MICRONS
3237
4.22
Kang Da Electronics Co.