Part Number | JANTX1N5809US |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Microsemi |
Description | DIODE GEN PURP 100V 3A B-MELF |
Series | Military, MIL-PRF-19500/477 |
Packaging | Bulk |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 5µA @ 100V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |
Image |
JANTX1N5809US
Microsemi Commercial Components Group
4490
1.08
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
JANTX1N5809US
MICROS
1036
2.265
YO CHIP(HONG KONG)TRADING CO LIMITED
JANTX1N5809US
MICROSEM
8858
3.45
Tormeka UAB
JANTX1N5809US
Microse
4773
4.635
HK FEILIDI ELECTRONIC CO., LIMITED
JANTX1N5809US
MICRONS
2820
5.82
DXWAY TECHNOLOGY CO., LIMITED