Part Number | JANTXV2N4150 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Microsemi |
Description | DIODE |
Series | Military, MIL-PRF-19500/394 |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 70V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5A, 5V |
Power - Max | 160W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
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JANTXV2N4150
Microsemi Commercial Components Group
14000
1.61
MY Group (Asia) Limited
JANTXV2N4150
MICROS
25860
1.8825
YU TUO (HONGKONG) TRADING CO., LIMITED
JANTXV2N4150
MICROSEM
1400
2.155
Bonase Electronics (HK) Co., Limited
JANTXV2N4150
Microse
30000
2.4275
Hong Kong Fly Bird Technology Limited
JANTXV2N3700UB
MICRONS
259
2.7
Rotakorn Electronics AB