Description
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die 100. 20:1. 0.75. M174. MS1007. 150. 6. 14. 50. 50. 100. 20:1. 0.75. M164. MS1008. 220. 13.9. 12. 28. 50. 750. 20:1. 0.7. M174. MS1076 . 220. 11. 13. 50. 50 . 150.
Part Number | MS1076 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Microsemi |
Description | TRANS RF BIPO 320W 16A M174 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 35V |
Frequency - Transition | 30MHz |
Noise Figure (dB Typ @ f) | - |
Gain | 12dB |
Power - Max | 320W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 7A, 5V |
Current - Collector (Ic) (Max) | 16A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | M174 |
Supplier Device Package | M174 |
Image |
MS1076
Microsemi Commercial Components Group
10
0.73
CEG COMPONENTS LIMITED
MS1076
MICROS
8000
1.7725
MY Group (Asia) Limited
MS1076
MICROSEM
6297
2.815
Dedicate Electronics (HK) Limited
MS1076
Microse
1400
3.8575
Bonase Electronics (HK) Co., Limited
MS1076B
MICRONS
6297
4.9
Dedicate Electronics (HK) Limited