Part Number | MS2200 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - RF |
Brand | Microsemi |
Description | TRANS RF BIPO 1167W 43.2A MS102 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 65V |
Frequency - Transition | 400MHz ~ 500MHz |
Noise Figure (dB Typ @ f) | - |
Gain | 9.7dB |
Power - Max | 1167W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
Current - Collector (Ic) (Max) | 43.2A |
Operating Temperature | 200°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | M102 |
Supplier Device Package | M102 |
Image |
MS2200
Microsemi Commercial Components Group
7854
0.96
Digchip Technology Co.,Limited
MS2200
MICROS
8146
1.87333333333333
MY Group (Asia) Limited
MS2200
MICROSEM
5848
2.78666666666667
Dopoint Hi-Tech Limited
MS2200A
Microse
6487
3.7
Dopoint Hi-Tech Limited