Part Number | SG2013J/883B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays |
Brand | Microsemi |
Description | TRANS 7NPN DARL 50V 0.6A 16JDIP |
Series | - |
Packaging | Tube |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600µA, 500mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | - |
Supplier Device Package | 16-CDIP |
Image |
SG2013J/883B
Microsemi Commercial Components Group
9622
0.55
Bonase Electronics (HK) Co., Limited
SG2013J-883B
MICROS
338
1.1525
Viassion Technology Co., Limited
SG2013J-883B
MICROSEM
6466
1.755
Unit Electronics Co., Limited
SG2013J-883B
Microse
5607
2.3575
Ande Electronics Co., Limited
SG2013J/883B
MICRONS
9448
2.96
N&S Electronic Co., Limited